Publication Date: 12th May 2016 Venue: IEEE Electronics letters Domain: Electronics & Photonics
A low cost, CMOS-compatible, and easily implementable method is presented for the synthesis of a thin film thermometer material for microbolometer applications. The thin film thermometer material was prepared by sputter depositing 11 alternative layers of vanadium pentoxide and vanadium followed by post-deposition annealing of the deposited structure in O2 atmosphere at 300°C. The synthesised thin film thermometers showed a maximum temperature coefficient of resistance of -2.92%/°C and a minimum resistivity 0.161 Ω cm.